id	sid	tid	token	lemma	pos
0c483j34z71	1	1	a	a	DET
0c483j34z71	1	2	universal	universal	ADJ
0c483j34z71	1	3	analytical	analytical	ADJ
0c483j34z71	1	4	tfet	tfet	NOUN
0c483j34z71	1	5	spice	spice	NOUN
0c483j34z71	1	6	(	(	PUNCT
0c483j34z71	1	7	simulation	simulation	NOUN
0c483j34z71	1	8	program	program	NOUN
0c483j34z71	1	9	with	with	ADP
0c483j34z71	1	10	integrated	integrated	ADJ
0c483j34z71	1	11	circuit	circuit	NOUN
0c483j34z71	1	12	emphasis	emphasis	NOUN
0c483j34z71	1	13	)	)	PUNCT
0c483j34z71	1	14	model	model	NOUN
0c483j34z71	1	15	has	have	AUX
0c483j34z71	1	16	been	be	AUX
0c483j34z71	1	17	developed	develop	VERB
0c483j34z71	1	18	to	to	PART
0c483j34z71	1	19	gain	gain	VERB
0c483j34z71	1	20	more	more	ADJ
0c483j34z71	1	21	insights	insight	NOUN
0c483j34z71	1	22	into	into	ADP
0c483j34z71	1	23	the	the	DET
0c483j34z71	1	24	benefits	benefit	NOUN
0c483j34z71	1	25	of	of	ADP
0c483j34z71	1	26	tfets	tfet	NOUN
0c483j34z71	1	27	in	in	ADP
0c483j34z71	1	28	low	low	ADJ
0c483j34z71	1	29	power	power	NOUN
0c483j34z71	1	30	circuit	circuit	NOUN
0c483j34z71	1	31	applications	application	NOUN
0c483j34z71	1	32	and	and	CCONJ
0c483j34z71	1	33	make	make	VERB
0c483j34z71	1	34	performance	performance	NOUN
0c483j34z71	1	35	projections	projection	NOUN
0c483j34z71	1	36	.	.	PUNCT
0c483j34z71	2	1	the	the	DET
0c483j34z71	2	2	model	model	NOUN
0c483j34z71	2	3	is	be	AUX
0c483j34z71	2	4	valid	valid	ADJ
0c483j34z71	2	5	in	in	ADP
0c483j34z71	2	6	all	all	DET
0c483j34z71	2	7	four	four	NUM
0c483j34z71	2	8	operating	operate	VERB
0c483j34z71	2	9	quadrants	quadrant	NOUN
0c483j34z71	2	10	of	of	ADP
0c483j34z71	2	11	tfets	tfet	NOUN
0c483j34z71	2	12	.	.	PUNCT
0c483j34z71	3	1	based	base	VERB
0c483j34z71	3	2	on	on	ADP
0c483j34z71	3	3	the	the	DET
0c483j34z71	3	4	kane	kane	NOUN
0c483j34z71	3	5	-	-	PUNCT
0c483j34z71	3	6	sze	sze	NOUN
0c483j34z71	3	7	formula	formula	NOUN
0c483j34z71	3	8	for	for	ADP
0c483j34z71	3	9	tunneling	tunneling	NOUN
0c483j34z71	3	10	,	,	PUNCT
0c483j34z71	3	11	this	this	DET
0c483j34z71	3	12	model	model	NOUN
0c483j34z71	3	13	captures	capture	VERB
0c483j34z71	3	14	the	the	DET
0c483j34z71	3	15	distinctive	distinctive	ADJ
0c483j34z71	3	16	features	feature	NOUN
0c483j34z71	3	17	of	of	ADP
0c483j34z71	3	18	tfets	tfet	NOUN
0c483j34z71	3	19	such	such	ADJ
0c483j34z71	3	20	as	as	ADP
0c483j34z71	3	21	steep	steep	ADJ
0c483j34z71	3	22	slope	slope	NOUN
0c483j34z71	3	23	,	,	PUNCT
0c483j34z71	3	24	superlinear	superlinear	PROPN
0c483j34z71	3	25	onset	onset	NOUN
0c483j34z71	3	26	,	,	PUNCT
0c483j34z71	3	27	ambipolar	ambipolar	ADJ
0c483j34z71	3	28	conduction	conduction	NOUN
0c483j34z71	3	29	,	,	PUNCT
0c483j34z71	3	30	and	and	CCONJ
0c483j34z71	3	31	negative	negative	ADJ
0c483j34z71	3	32	differential	differential	ADJ
0c483j34z71	3	33	resistance	resistance	NOUN
0c483j34z71	3	34	.	.	PUNCT
0c483j34z71	4	1	the	the	DET
0c483j34z71	4	2	tfet	tfet	NOUN
0c483j34z71	4	3	model	model	NOUN
0c483j34z71	4	4	has	have	AUX
0c483j34z71	4	5	been	be	AUX
0c483j34z71	4	6	validated	validate	VERB
0c483j34z71	4	7	on	on	ADP
0c483j34z71	4	8	various	various	ADJ
0c483j34z71	4	9	tfet	tfet	NOUN
0c483j34z71	4	10	structures	structure	NOUN
0c483j34z71	4	11	including	include	VERB
0c483j34z71	4	12	a	a	DET
0c483j34z71	4	13	planar	planar	ADJ
0c483j34z71	4	14	inas	inas	PROPN
0c483j34z71	4	15	double	double	ADJ
0c483j34z71	4	16	-	-	PUNCT
0c483j34z71	4	17	gate	gate	NOUN
0c483j34z71	4	18	tfet	tfet	NOUN
0c483j34z71	4	19	,	,	PUNCT
0c483j34z71	4	20	an	an	DET
0c483j34z71	4	21	algasb	algasb	PROPN
0c483j34z71	4	22	/	/	SYM
0c483j34z71	4	23	inas	inas	PROPN
0c483j34z71	4	24	in	in	ADP
0c483j34z71	4	25	-	-	PUNCT
0c483j34z71	4	26	line	line	NOUN
0c483j34z71	4	27	tfet	tfet	NOUN
0c483j34z71	4	28	,	,	PUNCT
0c483j34z71	4	29	and	and	CCONJ
0c483j34z71	4	30	side	side	NOUN
0c483j34z71	4	31	-	-	PUNCT
0c483j34z71	4	32	gate	gate	NOUN
0c483j34z71	4	33	gan	gan	PROPN
0c483j34z71	4	34	/	/	SYM
0c483j34z71	4	35	inn	inn	PROPN
0c483j34z71	4	36	/	/	SYM
0c483j34z71	4	37	gan	gan	PROPN
0c483j34z71	4	38	tfet	tfet	PROPN
0c483j34z71	4	39	,	,	PUNCT
0c483j34z71	4	40	and	and	CCONJ
0c483j34z71	4	41	good	good	ADJ
0c483j34z71	4	42	agreement	agreement	NOUN
0c483j34z71	4	43	is	be	AUX
0c483j34z71	4	44	observed	observe	VERB
0c483j34z71	4	45	between	between	ADP
0c483j34z71	4	46	the	the	DET
0c483j34z71	4	47	model	model	NOUN
0c483j34z71	4	48	and	and	CCONJ
0c483j34z71	4	49	published	publish	VERB
0c483j34z71	4	50	simulations	simulation	NOUN
0c483j34z71	4	51	.	.	PUNCT
0c483j34z71	5	1	to	to	PART
0c483j34z71	5	2	improve	improve	VERB
0c483j34z71	5	3	the	the	DET
0c483j34z71	5	4	accuracy	accuracy	NOUN
0c483j34z71	5	5	of	of	ADP
0c483j34z71	5	6	circuit	circuit	NOUN
0c483j34z71	5	7	simulation	simulation	NOUN
0c483j34z71	5	8	,	,	PUNCT
0c483j34z71	5	9	more	more	ADJ
0c483j34z71	5	10	components	component	NOUN
0c483j34z71	5	11	have	have	AUX
0c483j34z71	5	12	been	be	AUX
0c483j34z71	5	13	added	add	VERB
0c483j34z71	5	14	,	,	PUNCT
0c483j34z71	5	15	in	in	ADP
0c483j34z71	5	16	particular	particular	ADJ
0c483j34z71	5	17	,	,	PUNCT
0c483j34z71	5	18	a	a	DET
0c483j34z71	5	19	gate	gate	ADJ
0c483j34z71	5	20	current	current	ADJ
0c483j34z71	5	21	model	model	NOUN
0c483j34z71	5	22	,	,	PUNCT
0c483j34z71	5	23	a	a	DET
0c483j34z71	5	24	charge	charge	NOUN
0c483j34z71	5	25	-	-	PUNCT
0c483j34z71	5	26	based	base	VERB
0c483j34z71	5	27	capacitance	capacitance	NOUN
0c483j34z71	5	28	model	model	NOUN
0c483j34z71	5	29	,	,	PUNCT
0c483j34z71	5	30	and	and	CCONJ
0c483j34z71	5	31	a	a	DET
0c483j34z71	5	32	noise	noise	NOUN
0c483j34z71	5	33	model	model	NOUN
0c483j34z71	5	34	.	.	PUNCT
0c483j34z71	6	1	the	the	DET
0c483j34z71	6	2	model	model	NOUN
0c483j34z71	6	3	has	have	AUX
0c483j34z71	6	4	been	be	AUX
0c483j34z71	6	5	implemented	implement	VERB
0c483j34z71	6	6	in	in	ADP
0c483j34z71	6	7	spice	spice	NOUN
0c483j34z71	6	8	simulators	simulator	NOUN
0c483j34z71	6	9	using	use	VERB
0c483j34z71	6	10	verilog	verilog	NOUN
0c483j34z71	6	11	-	-	PUNCT
0c483j34z71	6	12	a	a	NOUN
0c483j34z71	6	13	and	and	CCONJ
0c483j34z71	6	14	implemented	implement	VERB
0c483j34z71	6	15	into	into	ADP
0c483j34z71	6	16	native	native	ADJ
0c483j34z71	6	17	aim	aim	NOUN
0c483j34z71	6	18	-	-	PUNCT
0c483j34z71	6	19	spice	spice	NOUN
0c483j34z71	6	20	,	,	PUNCT
0c483j34z71	6	21	available	available	ADJ
0c483j34z71	6	22	on	on	ADP
0c483j34z71	6	23	mac	mac	PROPN
0c483j34z71	6	24	,	,	PUNCT
0c483j34z71	6	25	windows	window	NOUN
0c483j34z71	6	26	,	,	PUNCT
0c483j34z71	6	27	android	android	PROPN
0c483j34z71	6	28	,	,	PUNCT
0c483j34z71	6	29	and	and	CCONJ
0c483j34z71	6	30	ios.besides	ios.beside	NOUN
0c483j34z71	6	31	steep	steep	ADJ
0c483j34z71	6	32	slope	slope	NOUN
0c483j34z71	6	33	transistor	transistor	NOUN
0c483j34z71	6	34	models	model	NOUN
0c483j34z71	6	35	a	a	DET
0c483j34z71	6	36	further	further	ADJ
0c483j34z71	6	37	focus	focus	NOUN
0c483j34z71	6	38	of	of	ADP
0c483j34z71	6	39	this	this	DET
0c483j34z71	6	40	dissertation	dissertation	NOUN
0c483j34z71	6	41	has	have	AUX
0c483j34z71	6	42	been	be	AUX
0c483j34z71	6	43	the	the	DET
0c483j34z71	6	44	exploration	exploration	NOUN
0c483j34z71	6	45	of	of	ADP
0c483j34z71	6	46	new	new	ADJ
0c483j34z71	6	47	memory	memory	NOUN
0c483j34z71	6	48	concepts	concept	NOUN
0c483j34z71	6	49	.	.	PUNCT
0c483j34z71	7	1	in	in	ADP
0c483j34z71	7	2	particular	particular	ADJ
0c483j34z71	7	3	a	a	DET
0c483j34z71	7	4	flash	flash	NOUN
0c483j34z71	7	5	memory	memory	NOUN
0c483j34z71	7	6	based	base	VERB
0c483j34z71	7	7	on	on	ADP
0c483j34z71	7	8	graphene	graphene	NOUN
0c483j34z71	7	9	and	and	CCONJ
0c483j34z71	7	10	solid	solid	ADJ
0c483j34z71	7	11	polymer	polymer	NOUN
0c483j34z71	7	12	electrolytes	electrolyte	NOUN
0c483j34z71	7	13	has	have	AUX
0c483j34z71	7	14	been	be	AUX
0c483j34z71	7	15	explored	explore	VERB
0c483j34z71	7	16	with	with	ADP
0c483j34z71	7	17	the	the	DET
0c483j34z71	7	18	aim	aim	NOUN
0c483j34z71	7	19	to	to	PART
0c483j34z71	7	20	provide	provide	VERB
0c483j34z71	7	21	nonvolatility	nonvolatility	NOUN
0c483j34z71	7	22	,	,	PUNCT
0c483j34z71	7	23	sub	sub	ADJ
0c483j34z71	7	24	-	-	ADJ
0c483j34z71	7	25	volt	volt	NOUN
0c483j34z71	7	26	access	access	NOUN
0c483j34z71	7	27	/	/	SYM
0c483j34z71	7	28	program	program	NOUN
0c483j34z71	7	29	voltage	voltage	NOUN
0c483j34z71	7	30	,	,	PUNCT
0c483j34z71	7	31	and	and	CCONJ
0c483j34z71	7	32	low	low	ADJ
0c483j34z71	7	33	power	power	NOUN
0c483j34z71	7	34	consumption	consumption	NOUN
0c483j34z71	7	35	,	,	PUNCT
0c483j34z71	7	36	but	but	CCONJ
0c483j34z71	7	37	more	more	ADV
0c483j34z71	7	38	importantly	importantly	ADV
0c483j34z71	7	39	could	could	AUX
0c483j34z71	7	40	provide	provide	VERB
0c483j34z71	7	41	nanosecond	nanosecond	NOUN
0c483j34z71	7	42	program	program	NOUN
0c483j34z71	7	43	/	/	SYM
0c483j34z71	7	44	erase	erase	NOUN
0c483j34z71	7	45	speed	speed	NOUN
0c483j34z71	7	46	.	.	PUNCT
0c483j34z71	8	1	processes	process	NOUN
0c483j34z71	8	2	were	be	AUX
0c483j34z71	8	3	developed	develop	VERB
0c483j34z71	8	4	for	for	ADP
0c483j34z71	8	5	deposition	deposition	NOUN
0c483j34z71	8	6	of	of	ADP
0c483j34z71	8	7	a	a	DET
0c483j34z71	8	8	2d	2d	NOUN
0c483j34z71	8	9	solid	solid	ADJ
0c483j34z71	8	10	polymer	polymer	NOUN
0c483j34z71	8	11	electrolyte	electrolyte	NOUN
0c483j34z71	8	12	,	,	PUNCT
0c483j34z71	8	13	15	15	NUM
0c483j34z71	8	14	-	-	PUNCT
0c483j34z71	8	15	crown-5	crown-5	NUM
0c483j34z71	8	16	-	-	PUNCT
0c483j34z71	8	17	ether	ether	NOUN
0c483j34z71	8	18	-	-	PUNCT
0c483j34z71	8	19	substituted	substitute	VERB
0c483j34z71	8	20	cobalt(ii	cobalt(ii	PROPN
0c483j34z71	8	21	)	)	PUNCT
0c483j34z71	8	22	phthalocyanine	phthalocyanine	NOUN
0c483j34z71	8	23	(	(	PUNCT
0c483j34z71	8	24	cocrpc	cocrpc	PROPN
0c483j34z71	8	25	)	)	PUNCT
0c483j34z71	8	26	,	,	PUNCT
0c483j34z71	8	27	the	the	DET
0c483j34z71	8	28	key	key	ADJ
0c483j34z71	8	29	enabling	enable	VERB
0c483j34z71	8	30	technology	technology	NOUN
0c483j34z71	8	31	in	in	ADP
0c483j34z71	8	32	the	the	DET
0c483j34z71	8	33	graphene	graphene	NOUN
0c483j34z71	8	34	flash	flash	NOUN
0c483j34z71	8	35	memory	memory	NOUN
0c483j34z71	8	36	.	.	PUNCT
0c483j34z71	9	1	the	the	DET
0c483j34z71	9	2	2d	2d	NOUN
0c483j34z71	9	3	electrolyte	electrolyte	NOUN
0c483j34z71	9	4	was	be	AUX
0c483j34z71	9	5	deposited	deposit	VERB
0c483j34z71	9	6	by	by	ADP
0c483j34z71	9	7	drop	drop	NOUN
0c483j34z71	9	8	casting	cast	VERB
0c483j34z71	9	9	a	a	DET
0c483j34z71	9	10	cocrpc	cocrpc	NOUN
0c483j34z71	9	11	-	-	PUNCT
0c483j34z71	9	12	containing	contain	VERB
0c483j34z71	9	13	solution	solution	NOUN
0c483j34z71	9	14	onto	onto	ADP
0c483j34z71	9	15	highly	highly	ADV
0c483j34z71	9	16	ordered	order	VERB
0c483j34z71	9	17	pyrolytic	pyrolytic	ADJ
0c483j34z71	9	18	graphite	graphite	NOUN
0c483j34z71	9	19	(	(	PUNCT
0c483j34z71	9	20	hopg	hopg	NOUN
0c483j34z71	9	21	)	)	PUNCT
0c483j34z71	9	22	followed	follow	VERB
0c483j34z71	9	23	by	by	ADP
0c483j34z71	9	24	ar	ar	PROPN
0c483j34z71	9	25	annealing	annealing	NOUN
0c483j34z71	9	26	.	.	PUNCT
0c483j34z71	10	1	atomic	atomic	ADJ
0c483j34z71	10	2	force	force	NOUN
0c483j34z71	10	3	microscopy	microscopy	NOUN
0c483j34z71	10	4	(	(	PUNCT
0c483j34z71	10	5	afm	afm	X
0c483j34z71	10	6	)	)	PUNCT
0c483j34z71	10	7	confirms	confirm	VERB
0c483j34z71	10	8	that	that	SCONJ
0c483j34z71	10	9	monolayer	monolayer	NOUN
0c483j34z71	10	10	cocrpc	cocrpc	PROPN
0c483j34z71	10	11	formation	formation	NOUN
0c483j34z71	10	12	is	be	AUX
0c483j34z71	10	13	achieved	achieve	VERB
0c483j34z71	10	14	with	with	ADP
0c483j34z71	10	15	a	a	DET
0c483j34z71	10	16	thickness	thickness	NOUN
0c483j34z71	10	17	of	of	ADP
0c483j34z71	10	18	~0.5	~0.5	NUM
0c483j34z71	10	19	nm	nm	NOUN
0c483j34z71	10	20	.	.	PROPN
0c483j34z71	10	21	to	to	PART
0c483j34z71	10	22	understand	understand	VERB
0c483j34z71	10	23	the	the	DET
0c483j34z71	10	24	basic	basic	ADJ
0c483j34z71	10	25	physics	physics	NOUN
0c483j34z71	10	26	of	of	ADP
0c483j34z71	10	27	ionelectron	ionelectron	NOUN
0c483j34z71	10	28	double	double	ADJ
0c483j34z71	10	29	layers	layer	NOUN
0c483j34z71	10	30	across	across	ADP
0c483j34z71	10	31	an	an	DET
0c483j34z71	10	32	ion	ion	NOUN
0c483j34z71	10	33	conductor	conductor	NOUN
0c483j34z71	10	34	with	with	ADP
0c483j34z71	10	35	nanometer	nanometer	NOUN
0c483j34z71	10	36	thickness	thickness	NOUN
0c483j34z71	10	37	,	,	PUNCT
0c483j34z71	10	38	a	a	DET
0c483j34z71	10	39	simplified	simplified	ADJ
0c483j34z71	10	40	memory	memory	NOUN
0c483j34z71	10	41	structure	structure	NOUN
0c483j34z71	10	42	was	be	AUX
0c483j34z71	10	43	proposed	propose	VERB
0c483j34z71	10	44	and	and	CCONJ
0c483j34z71	10	45	subsequently	subsequently	ADV
0c483j34z71	10	46	fabricated	fabricate	VERB
0c483j34z71	10	47	and	and	CCONJ
0c483j34z71	10	48	tested	test	VERB
0c483j34z71	10	49	.	.	PUNCT
0c483j34z71	11	1	program	program	NOUN
0c483j34z71	11	2	tests	test	NOUN
0c483j34z71	11	3	demonstrate	demonstrate	VERB
0c483j34z71	11	4	that	that	SCONJ
0c483j34z71	11	5	the	the	DET
0c483j34z71	11	6	memory	memory	NOUN
0c483j34z71	11	7	cell	cell	NOUN
0c483j34z71	11	8	can	can	AUX
0c483j34z71	11	9	be	be	AUX
0c483j34z71	11	10	programmed	program	VERB
0c483j34z71	11	11	and	and	CCONJ
0c483j34z71	11	12	erased	erase	VERB
0c483j34z71	11	13	by	by	ADP
0c483j34z71	11	14	applying	apply	VERB
0c483j34z71	11	15	positive	positive	ADJ
0c483j34z71	11	16	and	and	CCONJ
0c483j34z71	11	17	negative	negative	ADJ
0c483j34z71	11	18	back	back	ADJ
0c483j34z71	11	19	gate	gate	NOUN
0c483j34z71	11	20	biases	bias	NOUN
0c483j34z71	11	21	.	.	PUNCT
0c483j34z71	12	1	besides	besides	SCONJ
0c483j34z71	12	2	memory	memory	NOUN
0c483j34z71	12	3	,	,	PUNCT
0c483j34z71	12	4	the	the	DET
0c483j34z71	12	5	2d	2d	NOUN
0c483j34z71	12	6	electrolyte	electrolyte	NOUN
0c483j34z71	12	7	can	can	AUX
0c483j34z71	12	8	also	also	ADV
0c483j34z71	12	9	serve	serve	VERB
0c483j34z71	12	10	as	as	ADP
0c483j34z71	12	11	a	a	DET
0c483j34z71	12	12	reconfigurable	reconfigurable	NOUN
0c483j34z71	12	13	ion	ion	NOUN
0c483j34z71	12	14	gate	gate	NOUN
0c483j34z71	12	15	for	for	ADP
0c483j34z71	12	16	2d	2d	NOUN
0c483j34z71	12	17	semiconductors	semiconductor	NOUN
0c483j34z71	12	18	or	or	CCONJ
0c483j34z71	12	19	a	a	DET
0c483j34z71	12	20	doping	dope	VERB
0c483j34z71	12	21	technique	technique	NOUN
0c483j34z71	12	22	in	in	ADP
0c483j34z71	12	23	2d	2d	NOUN
0c483j34z71	12	24	fets	fet	NOUN
0c483j34z71	12	25	and	and	CCONJ
0c483j34z71	12	26	tfets	tfet	NOUN
0c483j34z71	12	27	.	.	PUNCT