id	sid	tid	token	lemma	pos
0c483j34v8f	1	1	owing	owe	VERB
0c483j34v8f	1	2	to	to	ADP
0c483j34v8f	1	3	the	the	DET
0c483j34v8f	1	4	large	large	ADJ
0c483j34v8f	1	5	band	band	NOUN
0c483j34v8f	1	6	gap	gap	NOUN
0c483j34v8f	1	7	(	(	PUNCT
0c483j34v8f	1	8	eggan=3.4ev	eggan=3.4ev	X
0c483j34v8f	1	9	)	)	PUNCT
0c483j34v8f	1	10	and	and	CCONJ
0c483j34v8f	1	11	high	high	ADJ
0c483j34v8f	1	12	electron	electron	NOUN
0c483j34v8f	1	13	saturation	saturation	NOUN
0c483j34v8f	1	14	velocity	velocity	NOUN
0c483j34v8f	1	15	,	,	PUNCT
0c483j34v8f	1	16	gan	gan	PROPN
0c483j34v8f	1	17	based	base	VERB
0c483j34v8f	1	18	high	high	ADJ
0c483j34v8f	1	19	electron	electron	NOUN
0c483j34v8f	1	20	mobility	mobility	NOUN
0c483j34v8f	1	21	transistors	transistor	NOUN
0c483j34v8f	1	22	(	(	PUNCT
0c483j34v8f	1	23	hemts	hemts	PROPN
0c483j34v8f	1	24	)	)	PUNCT
0c483j34v8f	1	25	are	be	AUX
0c483j34v8f	1	26	attractive	attractive	ADJ
0c483j34v8f	1	27	for	for	ADP
0c483j34v8f	1	28	high	high	ADJ
0c483j34v8f	1	29	voltage	voltage	NOUN
0c483j34v8f	1	30	and	and	CCONJ
0c483j34v8f	1	31	high	high	ADJ
0c483j34v8f	1	32	speed	speed	NOUN
0c483j34v8f	1	33	switching	switching	NOUN
0c483j34v8f	1	34	.	.	PUNCT
0c483j34v8f	2	1	in	in	ADP
0c483j34v8f	2	2	this	this	DET
0c483j34v8f	2	3	work	work	NOUN
0c483j34v8f	2	4	,	,	PUNCT
0c483j34v8f	2	5	three	three	NUM
0c483j34v8f	2	6	aspects	aspect	NOUN
0c483j34v8f	2	7	of	of	ADP
0c483j34v8f	2	8	such	such	ADJ
0c483j34v8f	2	9	transistors	transistor	NOUN
0c483j34v8f	2	10	are	be	AUX
0c483j34v8f	2	11	studied	study	VERB
0c483j34v8f	2	12	.	.	PUNCT
0c483j34v8f	3	1	the	the	DET
0c483j34v8f	3	2	role	role	NOUN
0c483j34v8f	3	3	of	of	ADP
0c483j34v8f	3	4	polarization	polarization	NOUN
0c483j34v8f	3	5	in	in	ADP
0c483j34v8f	3	6	leakage	leakage	NOUN
0c483j34v8f	3	7	currents	current	NOUN
0c483j34v8f	3	8	in	in	ADP
0c483j34v8f	3	9	gate	gate	NOUN
0c483j34v8f	3	10	stacks	stack	NOUN
0c483j34v8f	3	11	,	,	PUNCT
0c483j34v8f	3	12	and	and	CCONJ
0c483j34v8f	3	13	consequences	consequence	NOUN
0c483j34v8f	3	14	for	for	ADP
0c483j34v8f	3	15	high	high	ADJ
0c483j34v8f	3	16	-	-	PUNCT
0c483j34v8f	3	17	voltage	voltage	NOUN
0c483j34v8f	3	18	switching	switching	NOUN
0c483j34v8f	3	19	is	be	AUX
0c483j34v8f	3	20	identified	identify	VERB
0c483j34v8f	3	21	.	.	PUNCT
0c483j34v8f	4	1	high	high	ADJ
0c483j34v8f	4	2	-	-	PUNCT
0c483j34v8f	4	3	performance	performance	NOUN
0c483j34v8f	4	4	gan	gan	PROPN
0c483j34v8f	4	5	hemts	hemts	PROPN
0c483j34v8f	4	6	on	on	ADP
0c483j34v8f	4	7	silicon	silicon	NOUN
0c483j34v8f	4	8	by	by	ADP
0c483j34v8f	4	9	rf	rf	NOUN
0c483j34v8f	4	10	-	-	PUNCT
0c483j34v8f	4	11	plasma	plasma	NOUN
0c483j34v8f	4	12	mbe	mbe	PROPN
0c483j34v8f	4	13	growth	growth	NOUN
0c483j34v8f	4	14	,	,	PUNCT
0c483j34v8f	4	15	with	with	ADP
0c483j34v8f	4	16	low	low	ADJ
0c483j34v8f	4	17	-	-	PUNCT
0c483j34v8f	4	18	resistance	resistance	NOUN
0c483j34v8f	4	19	mbe	mbe	PROPN
0c483j34v8f	4	20	-	-	PUNCT
0c483j34v8f	4	21	regrown	regrown	VERB
0c483j34v8f	4	22	ohmic	ohmic	ADJ
0c483j34v8f	4	23	contacts	contact	NOUN
0c483j34v8f	4	24	is	be	AUX
0c483j34v8f	4	25	demonstrated	demonstrate	VERB
0c483j34v8f	4	26	.	.	PUNCT
0c483j34v8f	5	1	the	the	DET
0c483j34v8f	5	2	role	role	NOUN
0c483j34v8f	5	3	of	of	ADP
0c483j34v8f	5	4	isotope	isotope	NOUN
0c483j34v8f	5	5	and	and	CCONJ
0c483j34v8f	5	6	disorder	disorder	NOUN
0c483j34v8f	5	7	engineering	engineering	NOUN
0c483j34v8f	5	8	is	be	AUX
0c483j34v8f	5	9	demonstrated	demonstrate	VERB
0c483j34v8f	5	10	as	as	ADP
0c483j34v8f	5	11	a	a	DET
0c483j34v8f	5	12	fundamentally	fundamentally	ADV
0c483j34v8f	5	13	new	new	ADJ
0c483j34v8f	5	14	method	method	NOUN
0c483j34v8f	5	15	to	to	PART
0c483j34v8f	5	16	boost	boost	VERB
0c483j34v8f	5	17	the	the	DET
0c483j34v8f	5	18	speed	speed	NOUN
0c483j34v8f	5	19	of	of	ADP
0c483j34v8f	5	20	gan	gan	PROPN
0c483j34v8f	5	21	hemts	hemts	PROPN
0c483j34v8f	5	22	.	.	PUNCT
0c483j34v8f	6	1	ultrathin	ultrathin	ADJ
0c483j34v8f	6	2	epitaxial	epitaxial	ADJ
0c483j34v8f	6	3	barriers	barrier	NOUN
0c483j34v8f	6	4	(	(	PUNCT
0c483j34v8f	6	5	such	such	ADJ
0c483j34v8f	6	6	as	as	ADP
0c483j34v8f	6	7	aln	aln	ADV
0c483j34v8f	6	8	or	or	CCONJ
0c483j34v8f	6	9	inaln	inaln	ADJ
0c483j34v8f	6	10	)	)	PUNCT
0c483j34v8f	6	11	result	result	VERB
0c483j34v8f	6	12	in	in	ADP
0c483j34v8f	6	13	substantial	substantial	ADJ
0c483j34v8f	6	14	leakage	leakage	NOUN
0c483j34v8f	6	15	currents	current	NOUN
0c483j34v8f	6	16	preventing	prevent	VERB
0c483j34v8f	6	17	the	the	DET
0c483j34v8f	6	18	capability	capability	NOUN
0c483j34v8f	6	19	to	to	PART
0c483j34v8f	6	20	block	block	VERB
0c483j34v8f	6	21	high	high	ADJ
0c483j34v8f	6	22	drain	drain	NOUN
0c483j34v8f	6	23	voltages	voltage	NOUN
0c483j34v8f	6	24	,	,	PUNCT
0c483j34v8f	6	25	and	and	CCONJ
0c483j34v8f	6	26	dielectrics	dielectric	NOUN
0c483j34v8f	6	27	like	like	ADP
0c483j34v8f	6	28	ald	ald	PROPN
0c483j34v8f	6	29	al2o3	al2o3	PROPN
0c483j34v8f	6	30	can	can	AUX
0c483j34v8f	6	31	substantially	substantially	ADV
0c483j34v8f	6	32	mitigate	mitigate	VERB
0c483j34v8f	6	33	this	this	DET
0c483j34v8f	6	34	problem	problem	NOUN
0c483j34v8f	6	35	.	.	PUNCT
0c483j34v8f	7	1	in	in	ADP
0c483j34v8f	7	2	this	this	DET
0c483j34v8f	7	3	work	work	NOUN
0c483j34v8f	7	4	we	we	PRON
0c483j34v8f	7	5	present	present	VERB
0c483j34v8f	7	6	a	a	DET
0c483j34v8f	7	7	comprehensive	comprehensive	ADJ
0c483j34v8f	7	8	electrical	electrical	ADJ
0c483j34v8f	7	9	characterization	characterization	NOUN
0c483j34v8f	7	10	/	/	SYM
0c483j34v8f	7	11	interface	interface	NOUN
0c483j34v8f	7	12	study	study	NOUN
0c483j34v8f	7	13	of	of	ADP
0c483j34v8f	7	14	al2o3/	al2o3/	PROPN
0c483j34v8f	7	15	(	(	PUNCT
0c483j34v8f	7	16	in)aln	in)aln	PROPN
0c483j34v8f	7	17	/	/	SYM
0c483j34v8f	7	18	gan	gan	PROPN
0c483j34v8f	7	19	mos	mos	PROPN
0c483j34v8f	7	20	-	-	PUNCT
0c483j34v8f	7	21	hemts	hemts	PROPN
0c483j34v8f	7	22	.	.	PUNCT
0c483j34v8f	8	1	we	we	PRON
0c483j34v8f	8	2	find	find	VERB
0c483j34v8f	8	3	the	the	DET
0c483j34v8f	8	4	presence	presence	NOUN
0c483j34v8f	8	5	,	,	PUNCT
0c483j34v8f	8	6	and	and	CCONJ
0c483j34v8f	8	7	propose	propose	VERB
0c483j34v8f	8	8	an	an	DET
0c483j34v8f	8	9	origin	origin	NOUN
0c483j34v8f	8	10	of	of	ADP
0c483j34v8f	8	11	benign	benign	ADJ
0c483j34v8f	8	12	donor	donor	NOUN
0c483j34v8f	8	13	-	-	PUNCT
0c483j34v8f	8	14	type	type	NOUN
0c483j34v8f	8	15	interface	interface	NOUN
0c483j34v8f	8	16	(	(	PUNCT
0c483j34v8f	8	17	ald	ald	PROPN
0c483j34v8f	8	18	/	/	SYM
0c483j34v8f	8	19	iii	iii	NUM
0c483j34v8f	8	20	-	-	PUNCT
0c483j34v8f	8	21	nitride	nitride	NOUN
0c483j34v8f	8	22	)	)	PUNCT
0c483j34v8f	8	23	charges	charge	NOUN
0c483j34v8f	8	24	that	that	PRON
0c483j34v8f	8	25	are	be	AUX
0c483j34v8f	8	26	closely	closely	ADV
0c483j34v8f	8	27	linked	link	VERB
0c483j34v8f	8	28	to	to	ADP
0c483j34v8f	8	29	the	the	DET
0c483j34v8f	8	30	polarization	polarization	NOUN
0c483j34v8f	8	31	charges	charge	NOUN
0c483j34v8f	8	32	of	of	ADP
0c483j34v8f	8	33	the	the	DET
0c483j34v8f	8	34	underlying	underlie	VERB
0c483j34v8f	8	35	metal	metal	NOUN
0c483j34v8f	8	36	polar	polar	ADJ
0c483j34v8f	8	37	nitride	nitride	NOUN
0c483j34v8f	8	38	substrate	substrate	NOUN
0c483j34v8f	8	39	.	.	PUNCT
0c483j34v8f	9	1	these	these	DET
0c483j34v8f	9	2	findings	finding	NOUN
0c483j34v8f	9	3	are	be	AUX
0c483j34v8f	9	4	expected	expect	VERB
0c483j34v8f	9	5	to	to	PART
0c483j34v8f	9	6	accelerate	accelerate	VERB
0c483j34v8f	9	7	the	the	DET
0c483j34v8f	9	8	choice	choice	NOUN
0c483j34v8f	9	9	of	of	ADP
0c483j34v8f	9	10	optimal	optimal	ADJ
0c483j34v8f	9	11	gate	gate	NOUN
0c483j34v8f	9	12	stacks	stack	NOUN
0c483j34v8f	9	13	for	for	ADP
0c483j34v8f	9	14	nitride	nitride	PROPN
0c483j34v8f	9	15	hemts	hemts	PROPN
0c483j34v8f	9	16	and	and	CCONJ
0c483j34v8f	9	17	further	far	ADV
0c483j34v8f	9	18	our	our	PRON
0c483j34v8f	9	19	understanding	understanding	NOUN
0c483j34v8f	9	20	of	of	ADP
0c483j34v8f	9	21	ald	ald	PROPN
0c483j34v8f	9	22	/	/	SYM
0c483j34v8f	9	23	iii	iii	NUM
0c483j34v8f	9	24	-	-	PUNCT
0c483j34v8f	9	25	nitride	nitride	NOUN
0c483j34v8f	9	26	interfaces	interface	NOUN
0c483j34v8f	9	27	with	with	ADP
0c483j34v8f	9	28	useful	useful	ADJ
0c483j34v8f	9	29	consequences	consequence	NOUN
0c483j34v8f	9	30	for	for	ADP
0c483j34v8f	9	31	high	high	ADJ
0c483j34v8f	9	32	-	-	PUNCT
0c483j34v8f	9	33	performance	performance	NOUN
0c483j34v8f	9	34	devices	device	NOUN
0c483j34v8f	9	35	.	.	PUNCT
0c483j34v8f	10	1	we	we	PRON
0c483j34v8f	10	2	analyze	analyze	VERB
0c483j34v8f	10	3	the	the	DET
0c483j34v8f	10	4	gate	gate	ADJ
0c483j34v8f	10	5	leakage	leakage	NOUN
0c483j34v8f	10	6	currents	current	NOUN
0c483j34v8f	10	7	in	in	ADP
0c483j34v8f	10	8	inaln	inaln	PROPN
0c483j34v8f	10	9	/	/	SYM
0c483j34v8f	10	10	aln	aln	PROPN
0c483j34v8f	10	11	/	/	SYM
0c483j34v8f	10	12	gan	gan	PROPN
0c483j34v8f	10	13	transistors	transistor	NOUN
0c483j34v8f	10	14	and	and	CCONJ
0c483j34v8f	10	15	propose	propose	VERB
0c483j34v8f	10	16	and	and	CCONJ
0c483j34v8f	10	17	demonstrate	demonstrate	VERB
0c483j34v8f	10	18	mechanisms	mechanism	NOUN
0c483j34v8f	10	19	to	to	PART
0c483j34v8f	10	20	accurately	accurately	ADV
0c483j34v8f	10	21	capture	capture	VERB
0c483j34v8f	10	22	the	the	DET
0c483j34v8f	10	23	trap	trap	NOUN
0c483j34v8f	10	24	-	-	PUNCT
0c483j34v8f	10	25	assisted	assist	VERB
0c483j34v8f	10	26	and	and	CCONJ
0c483j34v8f	10	27	tunneling	tunneling	NOUN
0c483j34v8f	10	28	dominated	dominate	VERB
0c483j34v8f	10	29	current	current	ADJ
0c483j34v8f	10	30	transport	transport	NOUN
0c483j34v8f	10	31	in	in	ADP
0c483j34v8f	10	32	these	these	DET
0c483j34v8f	10	33	heterostructures	heterostructure	NOUN
0c483j34v8f	10	34	.	.	PUNCT
0c483j34v8f	11	1	large	large	ADJ
0c483j34v8f	11	2	-	-	PUNCT
0c483j34v8f	11	3	area	area	NOUN
0c483j34v8f	11	4	and	and	CCONJ
0c483j34v8f	11	5	low	low	ADJ
0c483j34v8f	11	6	-	-	PUNCT
0c483j34v8f	11	7	cost	cost	NOUN
0c483j34v8f	11	8	silicon	silicon	NOUN
0c483j34v8f	11	9	wafers	wafer	NOUN
0c483j34v8f	11	10	are	be	AUX
0c483j34v8f	11	11	attractive	attractive	ADJ
0c483j34v8f	11	12	substrates	substrate	NOUN
0c483j34v8f	11	13	for	for	ADP
0c483j34v8f	11	14	gan	gan	PROPN
0c483j34v8f	11	15	rf	rf	PROPN
0c483j34v8f	11	16	and	and	CCONJ
0c483j34v8f	11	17	power	power	NOUN
0c483j34v8f	11	18	electronics	electronic	NOUN
0c483j34v8f	11	19	.	.	PUNCT
0c483j34v8f	12	1	we	we	PRON
0c483j34v8f	12	2	address	address	VERB
0c483j34v8f	12	3	the	the	DET
0c483j34v8f	12	4	key	key	ADJ
0c483j34v8f	12	5	challenges	challenge	NOUN
0c483j34v8f	12	6	and	and	CCONJ
0c483j34v8f	12	7	find	find	VERB
0c483j34v8f	12	8	solutions	solution	NOUN
0c483j34v8f	12	9	for	for	ADP
0c483j34v8f	12	10	the	the	DET
0c483j34v8f	12	11	rf	rf	PROPN
0c483j34v8f	12	12	-	-	PUNCT
0c483j34v8f	12	13	mbe	mbe	NOUN
0c483j34v8f	12	14	growth	growth	NOUN
0c483j34v8f	12	15	of	of	ADP
0c483j34v8f	12	16	gan	gan	PROPN
0c483j34v8f	12	17	hemts	hemts	PROPN
0c483j34v8f	12	18	on	on	ADP
0c483j34v8f	12	19	si	si	X
0c483j34v8f	12	20	(	(	PUNCT
0c483j34v8f	12	21	111	111	NUM
0c483j34v8f	12	22	)	)	PUNCT
0c483j34v8f	12	23	.	.	PUNCT
0c483j34v8f	13	1	by	by	ADP
0c483j34v8f	13	2	developing	develop	VERB
0c483j34v8f	13	3	low	low	ADJ
0c483j34v8f	13	4	-	-	PUNCT
0c483j34v8f	13	5	leakage	leakage	NOUN
0c483j34v8f	13	6	buffer	buffer	NOUN
0c483j34v8f	13	7	layers	layer	NOUN
0c483j34v8f	13	8	,	,	PUNCT
0c483j34v8f	13	9	and	and	CCONJ
0c483j34v8f	13	10	employing	employ	VERB
0c483j34v8f	13	11	raised	raise	VERB
0c483j34v8f	13	12	source	source	NOUN
0c483j34v8f	13	13	/	/	SYM
0c483j34v8f	13	14	drain	drain	NOUN
0c483j34v8f	13	15	regrown	regrown	VERB
0c483j34v8f	13	16	ohmic	ohmic	ADJ
0c483j34v8f	13	17	contacts	contact	NOUN
0c483j34v8f	13	18	by	by	ADP
0c483j34v8f	13	19	mbe	mbe	PROPN
0c483j34v8f	13	20	,	,	PUNCT
0c483j34v8f	13	21	high	high	ADJ
0c483j34v8f	13	22	performance	performance	NOUN
0c483j34v8f	13	23	hemts	hemts	PROPN
0c483j34v8f	13	24	are	be	AUX
0c483j34v8f	13	25	realized	realize	VERB
0c483j34v8f	13	26	.	.	PUNCT
0c483j34v8f	14	1	it	it	PRON
0c483j34v8f	14	2	is	be	AUX
0c483j34v8f	14	3	expected	expect	VERB
0c483j34v8f	14	4	to	to	PART
0c483j34v8f	14	5	motivate	motivate	VERB
0c483j34v8f	14	6	further	further	ADJ
0c483j34v8f	14	7	ideas	idea	NOUN
0c483j34v8f	14	8	for	for	ADP
0c483j34v8f	14	9	integration	integration	NOUN
0c483j34v8f	14	10	of	of	ADP
0c483j34v8f	14	11	gan	gan	PROPN
0c483j34v8f	14	12	with	with	ADP
0c483j34v8f	14	13	silicon	silicon	NOUN
0c483j34v8f	14	14	that	that	PRON
0c483j34v8f	14	15	go	go	VERB
0c483j34v8f	14	16	beyond	beyond	ADP
0c483j34v8f	14	17	rf	rf	PROPN
0c483j34v8f	14	18	and	and	CCONJ
0c483j34v8f	14	19	power	power	NOUN
0c483j34v8f	14	20	electronics	electronic	NOUN
0c483j34v8f	14	21	into	into	ADP
0c483j34v8f	14	22	the	the	DET
0c483j34v8f	14	23	regime	regime	NOUN
0c483j34v8f	14	24	of	of	ADP
0c483j34v8f	14	25	low	low	ADJ
0c483j34v8f	14	26	power	power	NOUN
0c483j34v8f	14	27	digital	digital	ADJ
0c483j34v8f	14	28	logic	logic	NOUN
0c483j34v8f	14	29	by	by	ADP
0c483j34v8f	14	30	exploiting	exploit	VERB
0c483j34v8f	14	31	the	the	DET
0c483j34v8f	14	32	unique	unique	ADJ
0c483j34v8f	14	33	polarization	polarization	NOUN
0c483j34v8f	14	34	properties	property	NOUN
0c483j34v8f	14	35	of	of	ADP
0c483j34v8f	14	36	gan	gan	PROPN
0c483j34v8f	14	37	.	.	PUNCT
0c483j34v8f	15	1	along	along	ADP
0c483j34v8f	15	2	those	those	DET
0c483j34v8f	15	3	lines	line	NOUN
0c483j34v8f	15	4	,	,	PUNCT
0c483j34v8f	15	5	polarization	polarization	NOUN
0c483j34v8f	15	6	engineered	engineer	VERB
0c483j34v8f	15	7	iii	iii	NUM
0c483j34v8f	15	8	-	-	PUNCT
0c483j34v8f	15	9	nitride	nitride	NOUN
0c483j34v8f	15	10	heterostructures	heterostructure	NOUN
0c483j34v8f	15	11	where	where	SCONJ
0c483j34v8f	15	12	2d	2d	DET
0c483j34v8f	15	13	electron	electron	NOUN
0c483j34v8f	15	14	and	and	CCONJ
0c483j34v8f	15	15	hole	hole	NOUN
0c483j34v8f	15	16	gases	gas	NOUN
0c483j34v8f	15	17	coexist	coexist	VERB
0c483j34v8f	15	18	are	be	AUX
0c483j34v8f	15	19	demonstrated	demonstrate	VERB
0c483j34v8f	15	20	.	.	PUNCT
0c483j34v8f	16	1	the	the	DET
0c483j34v8f	16	2	measured	measure	VERB
0c483j34v8f	16	3	electron	electron	NOUN
0c483j34v8f	16	4	saturation	saturation	NOUN
0c483j34v8f	16	5	velocity	velocity	NOUN
0c483j34v8f	16	6	in	in	ADP
0c483j34v8f	16	7	the	the	DET
0c483j34v8f	16	8	fastest	fast	ADJ
0c483j34v8f	16	9	gan	gan	ADJ
0c483j34v8f	16	10	transistors	transistor	NOUN
0c483j34v8f	16	11	is	be	AUX
0c483j34v8f	16	12	still	still	ADV
0c483j34v8f	16	13	far	far	ADV
0c483j34v8f	16	14	below	below	ADP
0c483j34v8f	16	15	the	the	DET
0c483j34v8f	16	16	expected	expect	VERB
0c483j34v8f	16	17	.	.	PUNCT
0c483j34v8f	17	1	a	a	DET
0c483j34v8f	17	2	phonon	phonon	NOUN
0c483j34v8f	17	3	mode	mode	NOUN
0c483j34v8f	17	4	density	density	NOUN
0c483j34v8f	17	5	bottleneck	bottleneck	NOUN
0c483j34v8f	17	6	was	be	AUX
0c483j34v8f	17	7	identified	identify	VERB
0c483j34v8f	17	8	as	as	ADP
0c483j34v8f	17	9	possible	possible	ADJ
0c483j34v8f	17	10	root	root	NOUN
0c483j34v8f	17	11	cause	cause	NOUN
0c483j34v8f	17	12	.	.	PUNCT
0c483j34v8f	18	1	theoretical	theoretical	ADJ
0c483j34v8f	18	2	calculations	calculation	NOUN
0c483j34v8f	18	3	subsequently	subsequently	ADV
0c483j34v8f	18	4	predicted	predict	VERB
0c483j34v8f	18	5	that	that	SCONJ
0c483j34v8f	18	6	by	by	ADP
0c483j34v8f	18	7	using	use	VERB
0c483j34v8f	18	8	a	a	DET
0c483j34v8f	18	9	mixture	mixture	NOUN
0c483j34v8f	18	10	of	of	ADP
0c483j34v8f	18	11	disordered	disorder	VERB
0c483j34v8f	18	12	isotopic	isotopic	ADJ
0c483j34v8f	18	13	alloy	alloy	NOUN
0c483j34v8f	18	14	ga	ga	PROPN
0c483j34v8f	18	15	(	(	PUNCT
0c483j34v8f	18	16	14n0.5	14n0.5	NUM
0c483j34v8f	18	17	15n0.5	15n0.5	NUM
0c483j34v8f	18	18	)	)	PUNCT
0c483j34v8f	18	19	,	,	PUNCT
0c483j34v8f	18	20	it	it	PRON
0c483j34v8f	18	21	is	be	AUX
0c483j34v8f	18	22	possible	possible	ADJ
0c483j34v8f	18	23	to	to	PART
0c483j34v8f	18	24	modify	modify	VERB
0c483j34v8f	18	25	the	the	DET
0c483j34v8f	18	26	density	density	NOUN
0c483j34v8f	18	27	of	of	ADP
0c483j34v8f	18	28	lo	lo	NOUN
0c483j34v8f	18	29	phonon	phonon	NOUN
0c483j34v8f	18	30	modes	mode	NOUN
0c483j34v8f	18	31	and	and	CCONJ
0c483j34v8f	18	32	consequently	consequently	ADV
0c483j34v8f	18	33	speed	speed	VERB
0c483j34v8f	18	34	up	up	ADP
0c483j34v8f	18	35	gan	gan	PROPN
0c483j34v8f	18	36	hemts	hemts	PROPN
0c483j34v8f	18	37	.	.	PUNCT
0c483j34v8f	19	1	in	in	ADP
0c483j34v8f	19	2	this	this	DET
0c483j34v8f	19	3	work	work	NOUN
0c483j34v8f	19	4	we	we	PRON
0c483j34v8f	19	5	experimentally	experimentally	ADV
0c483j34v8f	19	6	demonstrate	demonstrate	VERB
0c483j34v8f	19	7	that	that	SCONJ
0c483j34v8f	19	8	by	by	ADP
0c483j34v8f	19	9	controlling	control	VERB
0c483j34v8f	19	10	the	the	DET
0c483j34v8f	19	11	concentrations	concentration	NOUN
0c483j34v8f	19	12	of	of	ADP
0c483j34v8f	19	13	the	the	DET
0c483j34v8f	19	14	subatomic	subatomic	ADJ
0c483j34v8f	19	15	particle	particle	NOUN
0c483j34v8f	19	16	neutrons	neutron	NOUN
0c483j34v8f	19	17	in	in	ADP
0c483j34v8f	19	18	nitrogen	nitrogen	NOUN
0c483j34v8f	19	19	atoms	atom	NOUN
0c483j34v8f	19	20	by	by	ADP
0c483j34v8f	19	21	mbe	mbe	PROPN
0c483j34v8f	19	22	,	,	PUNCT
0c483j34v8f	19	23	it	it	PRON
0c483j34v8f	19	24	is	be	AUX
0c483j34v8f	19	25	indeed	indeed	ADV
0c483j34v8f	19	26	possible	possible	ADJ
0c483j34v8f	19	27	to	to	PART
0c483j34v8f	19	28	improve	improve	VERB
0c483j34v8f	19	29	the	the	DET
0c483j34v8f	19	30	saturation	saturation	NOUN
0c483j34v8f	19	31	velocity	velocity	NOUN
0c483j34v8f	19	32	,	,	PUNCT
0c483j34v8f	19	33	providing	provide	VERB
0c483j34v8f	19	34	a	a	DET
0c483j34v8f	19	35	means	means	NOUN
0c483j34v8f	19	36	to	to	PART
0c483j34v8f	19	37	go	go	VERB
0c483j34v8f	19	38	beyond	beyond	ADP
0c483j34v8f	19	39	what	what	PRON
0c483j34v8f	19	40	is	be	AUX
0c483j34v8f	19	41	conventionally	conventionally	ADV
0c483j34v8f	19	42	thought	think	VERB
0c483j34v8f	19	43	possible	possible	ADJ
0c483j34v8f	19	44	in	in	ADP
0c483j34v8f	19	45	semiconductor	semiconductor	NOUN
0c483j34v8f	19	46	physics	physic	NOUN
0c483j34v8f	19	47	.	.	PUNCT