id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
z029p269t5c	Guowang Li	Nitride Channels on Aluminum Nitride: Materials and Devices	2015		.txt	text/plain	480	21	53	Nitride devices on AlN platform stand also to benefit from the symmetry of electronic polarization: high density hole gases can be generated in much the same way as the high density 2DEG in GaN HEMTs, thus enabling p-channel FETs (pFETs) on the same material platform as nFETs in a logical manner. Various channels (InGaN, AlGaN etc.) could be explored in the future to improve carrier mobility, induce higher carrier density or enhance breakdown characteristics.	cache/z029p269t5c.txt	txt/z029p269t5c.txt