id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
wh246q20m66	Kevin Goodman	Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires	2010		.txt	text/plain	288	16	55	Due to large lattice mismatch between materials with bandgaps near those needed for green emission and popular epitaxial substrates, dislocations prevent fabricating materials with high optical efficiencies. Siliconitride nanowire p-n junctions were grown and fabricated for the first time in Nitride MBE nanowire technology using p-type Silicon.	cache/wh246q20m66.txt	txt/wh246q20m66.txt