id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
w0892805c44	Huacheng Ye	High-Performance Back-End-of-Line Compatible Indium Tungsten Oxide (IWO) Transistors for Monolithic-3D Application	2022		.txt	text/plain	388	15	45	This approach can provide higher transistor density without scaling the transistor size and higher bandwidth due to its high-density MIVs. Moreover, an IL-free IWO ferroelectric transistor, based on our first proposed W-sacrificial-layer process, was also demonstrated, which showed the highest memory window, endurance, and read/write speed, as compared to other AOS ferroelectric transistors.	cache/w0892805c44.txt	txt/w0892805c44.txt