id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
vx021c2104k	Michael S. McConnell	Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition	1904		.txt	text/plain	276	8	27	Furthermore, comparison of devices at low temperatures (~4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.	cache/vx021c2104k.txt	txt/vx021c2104k.txt