id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
vm40xp71306	Jialin Zhao	Engineering of Silicon and Germanium Tunnel Diodes for Integrated Circuit Application	2008		.txt	text/plain	290	15	50	To the author's knowledge, these accomplishments are the first demonstration of lateral Si tunnel diodes using spin-on diffusants and rapid thermal processing. A self-aligned lateral fabrication process, which forms the junction perpendicular to the substrate plane, has also been successfully developed and yielded backward Si tunnel diodes with peak current densities of 30 nA/ÌÂm2.	cache/vm40xp71306.txt	txt/vm40xp71306.txt