id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
th83kw5521z	Ronghua Wang	High Speed InAl(Ga)N-Barrier HEMTs	2013		.txt	text/plain	313	7	25	While the conventional AlGaN-barrier GaN high electron mobility transistors (HEMTs) gradually matured in the past fifteen years, one of the recent research interests is focused on highly scaled structures to achieve high current gain and power gain cut-off frequency fT/fmax for high speed and power amplifying applications. In this dissertation, advanced epitaxial designs have been investigated in order to obtain excellent transport properties, good scalability, and improved electron confinement for high speed electronics.	cache/th83kw5521z.txt	txt/th83kw5521z.txt