id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
th83kw5520m	Yu Cao	Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions	2007		.txt	text/plain	221	12	49	The large polarization difference between AlN and GaN provides extremely high electron densities at the interface of AlN/GaN heterojunctions. At low temperature, Shubnikov-de-Haas oscillations have been observed for the first time in single AlN/GaN heterojunctions.	cache/th83kw5520m.txt	txt/th83kw5520m.txt