id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
t722h70564f	Wenjie Chen	Defects in Emerging III-V Materials for Electronic and Optoelectronic Applications	2013		.txt	text/plain	462	18	45	For the InGaAs/GaAsSb MQW photodiodes, several device structures, including lattice-matched MQWs, conventional layer-by-layer strain-compensated MQWs, and a strained MQW, were evaluated. Deep level traps in two emerging classes of devices, InGaAs/GaAsSb multiple quantum well (MQW) photodiodes for mid-IR detection and GaAs-based MOSFETs using InAlP native oxide and Al2O3 as gate dielectrics for microwave-frequency circuit applications, are studied using several characterization techniques, with an eye towards using this information in order to further improve device performance.	cache/t722h70564f.txt	txt/t722h70564f.txt