id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
sn009w05j3d	Kejia Wang	MBE Growth and Characterization of Indium Nitride for Device Applications	2010		.txt	text/plain	283	11	40	The transport properties of InN have been studied using Hall effect measurements. A close correlation is found between the structural quality and the electron transport properties of InN. Magnetic field dependent Hall effect measurements were performed and a quantitative mobility spectrum analysis (QMSA) was used to extract the mobility spectrum for electrons in InN. With photoluminescence and absorption spectroscopy measurements, the optical band gap of InN was found to be ~ 0.67 eV. To study the conduction band offset between InN and GaN, n-n isotype InN/GaN heterojunction diodes were grown and fabricated.	cache/sn009w05j3d.txt	txt/sn009w05j3d.txt