id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
r494vh56b48	Jai Kishan Verma	Polarization Engineering for Novel III-V Nitride Device Structures	2010		.txt	text/plain	346	14	47	In addition a shoulder extending to energies higher than GaN band gap (3.4 eV) was observed in the EL spectra signifying recombination occuring in high band gap AlGaN layers. N-face growth can also help in solving the p-type doping problem for wide band gap nitrides.	cache/r494vh56b48.txt	txt/r494vh56b48.txt