id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
r494vh5694z	Xiu Xing	Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications	2013		.txt	text/plain	425	17	43	Operation at high gate bias (to at least 1.5V) without significant gate leakage is demonstrated. However, despite the excellent performance obtained, the demonstrated devices do not yet exhibit the full advantages of the new gate structure and high mobility channel due to un-optimized device designs.	cache/r494vh5694z.txt	txt/r494vh5694z.txt