id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
qv33rv06f6w	Pei Zhao	Novel High Frequency Devices with Graphene and GaN	2015		.txt	text/plain	785	40	49	In chapter 4, we compared the performance of GaN Schottky diodes on bulk GaN substrates and GaN-on-sapphire substrates. The forward bias IV characteristics of GaN Schottky diodes on bulk GaN substrate and GaN-on-sapphire substrate are well explained by the thermionic emission model.	cache/qv33rv06f6w.txt	txt/qv33rv06f6w.txt