id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
p2676t07g42	Zongyang Hu	GaN HEMTs and MOSHEMTs for Power Switching Applications	2014		.txt	text/plain	162	4	27	While the material and device physics for GaN HEMTs have been studied extensively in the past decades, penetration of power device market relies on the development of high performance devices, which requires solving a series of critical issues including gate leakage, device passivation and threshold voltage control. In this work, development of enhancement mode GaN HEMTs and MOSHEMTs is discussed, with a focus on variation of device fabrication techniques and its impact on device characteristics, providing solutions to the aforementioned issues.	cache/p2676t07g42.txt	txt/p2676t07g42.txt