id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
p2676t07f0c	Ze Zhang	Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System	2010		.txt	text/plain	183	9	45	Devices incorporating an Al0.1Ga0.9Sb anode instead of a GaSb anode show improved curvature coefficient. Based on estimates of potential for contact resistance improvement and device scaling (down to 1 um^2), improvement of the intrinsic cut-off frequency to over 500 GHz appears possible for this structure.	cache/p2676t07f0c.txt	txt/p2676t07f0c.txt