id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ns064457k93	Yeqing Lu	Tunnel Transistor Modeling	2011		.txt	text/plain	188	9	41	The major advantage of tunnel transistors is the possibility to achieve less than 60 mV/decade sub-threshold swing, which is the thermionic limit in conventional MOSFETs. In this work, simulation of III-V semiconductor based tunnel transistors has been explored using both commercially available simulator (Synopsys TCAD) and novel analytical compact models.	cache/ns064457k93.txt	txt/ns064457k93.txt