id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ng451g08h0n	Jingshan Wang	High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off	1904		.txt	text/plain	548	20	42	To investigate vertical GaN devices and the potential benefits of ELO processing, Schottky diodes and p-n junction diodes have been fabricated and tested. Unlike other power device options, most GaN devices are built on lattice-mismatched non-native substrates such as sapphire or SiC because of the high cost and limited availability of bulk GaN substrates.	cache/ng451g08h0n.txt	txt/ng451g08h0n.txt