id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
mw22v40831h	Kristof Tahy	2D Graphene and Graphene Nanoribbon Field Effect Transistors	2012		.txt	text/plain	226	11	49	Fabrication and electrical measurements of 2D graphene devices lead to the verification of the predicted T^2 dependence of the intrinsic carrier concentration in graphene. Process limitations lead to the utilization of a new e-beam lithography resist (HSQ) and to the switch to epitaxial graphene on SiC substrates.	cache/mw22v40831h.txt	txt/mw22v40831h.txt