id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
mw22v40828m	Faiza Afroz Faria	MBE Growth of GaN Heterostructures for High Performance HEMTs	2015		.txt	text/plain	370	18	52	Additionally, we investigated crystalline AlN growth at a low temperature of ~ 480 &#176;C. This was motivated by novel MBE grown AlN barrier HEMT structures with high mobility InGaN channels for Terahertz applications. To fully exploit the potential of MBE grown high quality HEMT structures, low resistance (< 0.1 &#937;.mm) regrown source/drain ohmic contacts are essential.	cache/mw22v40828m.txt	txt/mw22v40828m.txt