id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
mk61rf58771	David A Deen	Advanced Design of Ultra-Thin Barrier AlN/GaN HEMTs: A Study of Device Design, Modeling, and Analysis	2011		.txt	text/plain	317	11	43	Furthermore, the ultra-thin (< 5 nm) barrier and excellent transport properties of this all binary heterostructure make it well suited for high electron mobility transistor applications where high frequency and high currentare required. This work encompasses various design aspects of GaN-based High Electron Mobility Transistors (HEMTs) which ultimately result in the realization of several generations that utilize the AlN/GaN heterostructure.	cache/mk61rf58771.txt	txt/mk61rf58771.txt