id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
m326m041v4b	Raj K Jana	Low-Power Electronic Devices for Energy-Efficient Applications	2015		.txt	text/plain	564	25	34	The goal is to design transistor switch in a way that the device dissipates less power during logic operation than conventional FETs, BJTs. We also developed compact models for III-nitride HEMTs incorporating polarization charge to calculate transistor characteristics, and device parameters.	cache/m326m041v4b.txt	txt/m326m041v4b.txt