id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
kd17cr58x8g	Bin Wu	InAs-on-SOI MOSFETs with Extreme Lattice Mismatch	2009		.txt	text/plain	275	11	59	MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 ÌÄ' 100 nm2. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island.	cache/kd17cr58x8g.txt	txt/kd17cr58x8g.txt