id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
k930bv75n6f	Nan Sun	Electronic Noise in Graphene FETs	2011		.txt	text/plain	124	7	67	A new noise model based upon a random array of charge traps is presented, which not only reproduces the observed gate voltage offset of the noise peak from the CNP, but also explains the noise asymmetry between the electron and hole branches. Noise measurements were made under vacuum at room temperature.	cache/k930bv75n6f.txt	txt/k930bv75n6f.txt