id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
k0698625s5s	Jing Zhou	Fabrication of ALGaN/GaN High Electron Mobility Transistors	2011		.txt	text/plain	166	9	55	Cl2-based GaN reactive ion etching, as a critical step of HEMT process flow, is investigated to obtain consistent etch rates with smooth etched surfaces. The atomic force microscopic study show the roughness of etched GaN surfaces is comparable with that of the as-grown surface.	cache/k0698625s5s.txt	txt/k0698625s5s.txt