id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
js956d59735	Wei Zhao	Impact of Uniaxial Strain on the Electrical Characteristics of CMOS and Esaki Tunnel Diode	2008		.txt	text/plain	335	9	24	In this thesis, the impact of uniaxial strain on the peak tunneling current density of Esaki tunnel diodes is theoretically calculated, considering strain-induced changes in the bandgap, electron repopulation among different valleys (only for multi-valley conduction band minimum) and the reduced mass along the tunneling directions. From the theoretical calculation, it is found that uniaxial stress can be used to improve peak tunneling current density of Esaki tunnel diodes and the optimum directions for current and uniaxial stress are identified to achieve the largest increase in peak tunneling current for a given magnitude of uniaxial stress.	cache/js956d59735.txt	txt/js956d59735.txt