id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
jq085h7718r	Hongshuo Wang	Edge Termination Design of Vertical GaN High Voltage P-N Diodes and Current Leakage Study of GaN P-N Diodes	2021		.txt	text/plain	315	13	50	Gallium nitride (GaN) is a wide bandgap semiconductor with huge potential in power electronics devices due to its large direct bandgap (3.4eV), high critical electrical field, high electron saturation velocity, large electron mobility, and high thermal conductivity compared with other common materials like Si, GaAs and SiC. Based on this promise, vertical GaN diodes have been demonstrated that are promising for high-voltage power applications. Therefore, in order to improve the performance of high power GaN devices, it is essential to study the role of edge effects in these devices.	cache/jq085h7718r.txt	txt/jq085h7718r.txt