id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
jm214m92p1t	Chuanxin Lian	Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion	2008		.txt	text/plain	160	9	54	The bare surface barrier heights of unintentionally doped Al0.22Ga0.78N and n-GaN in air were estimated by comparing the SP of (Al)GaN and Ni. Scanning Kelvin probe microscopy was applied for the surface potential (SP) measurements across lateral Ni-(Al)GaN Schottky junctions.	cache/jm214m92p1t.txt	txt/jm214m92p1t.txt