id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
h128nc6065g	Mingjun Huang	Erbium-Doped Wet Oxides of AlGaAs and InAlP on GaAs Substratesfor Optoelectronic Integration	2008		.txt	text/plain	318	8	24	Substantial research effort is still focused on developing host materials suitable for theincorporation of the high Er concentration required in devices of limited waveguidelength, critical to compensate for the small optical transition cross sections of Er ions. Finally, as the Er host materials developed in this work are based on GaAssubstrates, they provide (when integrated with the proposed VIP excitation scheme) aunique advantage over other candidate hosts in their potential for achievingmonolithically-pumped Er-doped optical devices of greatly reduced size and cost, pavingthe way for a possible future revolution in more agile optical networks, compact lasersfor range finding, sensors and other applications.	cache/h128nc6065g.txt	txt/h128nc6065g.txt