id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ft848p61j5d	Sara Fathipour	Electric Double Layer Doping and Process Development for Transition-Metal-Dichalcogenide Tunnel Field-Effect Transistors	1904		.txt	text/plain	303	9	39	The devices show clear rectification with a forward-to-reverse current ratio of 2000 to 28,000.As a part of the TFET process development, two techniques were utilized to deposit gate dielectrics on TMD channels: one suitable for planar channel geometries and the other suitable for nonplanar geometries. On exfoliated WSe2 channels, sheet carrier density and current density as high as (4.9±1.9) x 10^13 cm-2 and 58 μA/μm for electrons, and (3.5±1.9) x 10^13 cm-2 and 50 μA/μm for holes were achieved at a channel length of 3.5 μm, thickness of 6.5 nm, and a drain-source bias of 2 V.EDL p-i-n junctions were created in exfoliated WSe2 FET channels without the use of side gates.	cache/ft848p61j5d.txt	txt/ft848p61j5d.txt