id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
dz010p12c46	Paolo Paletti	Tunnel Field-Effect Transistors: Device Models and Experiments on Two-Dimensional Semiconductors, Including Demonstration of Electric-Double-Layer Esaki Junctions	2019		.txt	text/plain	356	12	38	Ion doping employing the solid polymer polyethylene oxide:cesium perchlorate (PEO:CsClO4) is then applied to decanometer WSe2 channels to form 2D lateral Esaki junctions. To properly characterize the transport properties of MBE-grown WSe2 thin films in a FET configuration in the presence of Schottky barrier-limited injection at the contacts, a semianalytical model has been developed and validated against experiments for different TMD channel materials.	cache/dz010p12c46.txt	txt/dz010p12c46.txt