id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
bn999595x9f	Guangle Zhou	III-V Vertical Tunnel Field Effect Transistors with Tunneling Aligned with the Gate Field	2012		.txt	text/plain	286	11	47	To achieve high on current (ION) and steep SS in TFETs, TFETs based on III-V semiconductors with small effective mass and favorable band alignment have been investigated by several groups. A novel TFET geometry with tunneling direction normal to the gate was then designed; and the early generations of TFETs were fabricated on an InGaAs/InP heterojunction and an InAs/AlGaSb heterojunction, showing promising results: ION/IOFF ~ 106, ION > 30 μA/μm at VDS = VGS = 1 V and SSMIN = 93 mV/dec.	cache/bn999595x9f.txt	txt/bn999595x9f.txt