id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
bn999595w8s	Kristof Tahy	Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors	2010		.txt	text/plain	224	11	51	The impressive properties such as the linear energy dispersion relation near the charge neutrality (Dirac) point in the electronic band structure, field-effect mobilities as high as 15 000 cm2/Vs and carrier velocity of ~10^8 cm/s at room temperature make graphene a possible candidate for electronic devices in the future. In this work, fabrication and high field characteristics of 2D and nanoribbon graphene are described on back and top gated field effect transistors (FETs).	cache/bn999595w8s.txt	txt/bn999595w8s.txt