id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
b2773t9684b	Jonathan Carl Leiner	Exchange Coupling in the Ferromagnetic Semiconductor GaMnAs	2012		.txt	text/plain	464	17	29	In addition, I describe efforts (and their unintended consequences on magnetic anisotropy) to control the incorporation of Mn in substitutional and interstitial positions of GaAs via increasing the Fermi level of GaMnAs during the growth by growing GaMnAs over Ge layers. In this connection, it is important to establish under what conditions the IEC between successive GaMnAs layers is antiferromagnetic (AFM) or ferromagnetic (FM),	cache/b2773t9684b.txt	txt/b2773t9684b.txt