id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
9p29086349d	Jia Guo	Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts	2012		.txt	text/plain	410	16	43	To this end, this thesis describes the development of non-alloyed ohmic contacts regrown by molecular beam epitaxy (MBE) and the resultant HEMTs at Notre Dame. The highlights of these efforts include: a minimum total contact resistance of 0.1 ohm-mm with a regrowth interface resistance of 0.02 ohm-mm; an output drain current of 1.8 A/mm, an extrinsic transconductance of 544 mS/mm, ft/fmax of 216/80 GHz on a 60-nm InAlN HEMT with non-alloyed ohmic contacts and without passivation.	cache/9p29086349d.txt	txt/9p29086349d.txt