id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
9g54xg96j6r	Surajit Kumar Sutar	Tunneling-Based Memory and Advances in Indium Phosphide-Based Processing	2010		.txt	text/plain	218	10	35	Tunneling-based static random access memory (TSRAM) uses the bistability of tunnel diodes to construct memory elements and requires tunnel diodes with peak currents exceeding transistor leakage currents, high peak-to-valley ratio (PVR) and low valley currents and voltages. Valley currents as low as 0.07 nA/ extmu m$^2$, which is the lowest reported for TSRAM tunnel diodes, and valley voltages as low as 250 mV were demonstrated.	cache/9g54xg96j6r.txt	txt/9g54xg96j6r.txt