id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
6t053f4819b	Yen-Chun Lee	Quilt Packaging Integration and Fabrication of Deep-Submicron Complementary Metal-Oxide Semiconductor Devices	2009		.txt	text/plain	200	8	44	Process and device simulation were executed to tune the various process parameters and predict the electrical behavior of such devices. Deep-submicron lithography and Very Large Scale Integration (VLSI) circuit with roughly 50000 transistors per chip require the high through-put of the G-line photolithography stepper tool and the high-resolution of the Electron Beam Lithography (EBL) tool.	cache/6t053f4819b.txt	txt/6t053f4819b.txt