id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
6969z031n1r	Xiang Li	Electrical properties and device applications of InAlP native oxide/GaAs MOS structures	2007		.txt	text/plain	367	15	33	Field-effect transistors using InAlP native oxide/GaAs structures have also been explored, resulting in the first demonstration of GaAs MOSFETs using InAlP oxide as the gate dielectric. The measured DC characteristics of fabricated InAlP oxide/GaAs MOSFETs fall below the theoretical predictions in terms of drain current and transconductance, while the measured RF results show that the devices have lower cut-off frequencies than expected from simple theoretical models.	cache/6969z031n1r.txt	txt/6969z031n1r.txt