id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
5x21td98h1c	Chuanxin Lian	Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors	2010		.txt	text/plain	375	14	53	Unfortunately, the large lat-tice mismatch between GaAs and GaN makes it very difficult to epitaxially grow high quality GaAs on GaN. Com-bining the unity emitter injection efficiency and the large base transport factor of Al-GaAs/GaAs, and the high breakdown field of GaN, an AlGaAs/GaAs/GaN npn HBT is expected to operate at high speed and high power densities.	cache/5x21td98h1c.txt	txt/5x21td98h1c.txt