id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
5999n298t9k	Adams Tong	Fabrication of Deep-Submicron Complementary Metal-Oxide-Semiconductor Devices	2010		.txt	text/plain	163	7	43	Through scaled size-reduction, CMOS devices can run at higher speed, consume less power and attain higher packing density. The aim of the thesis is to design the fabrication process for building CMOS devices with 0.25μm gate length and Quilt- Packaging protruding metal nodules.	cache/5999n298t9k.txt	txt/5999n298t9k.txt