id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
2f75r783t8k	Wenjun Li	Gallium Nitride Field-Effect Transistors for Low-Power Applications	2016		.txt	text/plain	384	17	44	By combining these features with the intrinsic material properties of GaN, such as high electron mobility and wide band gap, GaN nanowire MOSFETs appear promising for the low-power high-speed applications and sensors. To improve the process controllability and enable ultra-dense integration, vertical GaN nanowire MOSFETs may be preferred, a fabrication process flow for which is presented.	cache/2f75r783t8k.txt	txt/2f75r783t8k.txt