id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
0v838052b06	Lina Cao	GaN-Based Impact-Ionization Avalanche Transit-Time (IMPATT) Diodes and Low-Loss Interconnects for Microwave and Millimeter Wave Applications	2020		.txt	text/plain	522	23	37	In terms of future work, the demonstration of functional GaN IMPATT diodes and oscillators based on them is proposed. In order to measure the impact ionization rates of electrons and holes in GaN, p-i-n avalanche diodes grown on native GaN substrates have been fabricated and characterized.	cache/0v838052b06.txt	txt/0v838052b06.txt