id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
0r967368222	William A. O'Brien	Toward Direct Bandgap Germanium Optoelectronics	1904		.txt	text/plain	372	16	42	In the second case, carbon sitting on Ge lattice sites induces strong local perturbations leading to an effect called band anticrossing, which strongly repels the Γ valley downward, again potentially yielding a direct bandgap. Ge has since been supplanted by silicon (Si), which has superior electronic and chemical attributes, and gallium arsenide (GaAs), which possesses superior properties for light-matter interaction (optoelectronics).	cache/0r967368222.txt	txt/0r967368222.txt