id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
0c483j34v8f	Satyaki Ganguly	High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon	2014		.txt	text/plain	451	18	43	High-performance GaN HEMTs on silicon by RF-plasma MBE growth, with low-resistance MBE-regrown ohmic contacts is demonstrated. The role of isotope and disorder engineering is demonstrated as a fundamentally new method to boost the speed of GaN HEMTs.	cache/0c483j34v8f.txt	txt/0c483j34v8f.txt