id	author	title	date	pages	extension	mime	words	sentences	flesch	summary	cache	txt
work_gynfkaaenfhqhn667qlzxlkemq	Naser Faramarzpour	CMOS photodetector systems for low-level light applications	2007.0	7	.pdf	application/pdf	4877	540	68	smart APS, where data processing is done on the pixel level 3, the performance of the three different APS structures is compared and their suitability for specific Fig. 1 (a) Structure of a three transistor active pixel sensor. Fig. 2 Signal-to-noise ratio (SNR) of the APS measured at different The general structure of our APS pixel with an internal measured reset signal and output of the pixel. sensing lower light levels requires higher integration times The measured output of the APS with integrator is Figure 6 shows how the output of the APS with integrator The output noise level of the APS with transistor APS pixel. Fig. 6 Output of the APS with integrator, sampled at different levels The APS with integrator structure has a low fill-factor. The APS with a comparator pixel is CMOS photodetector systems for low-level light applications CMOS photodetector systems for low-level light applications	./cache/work_gynfkaaenfhqhn667qlzxlkemq.pdf	./txt/work_gynfkaaenfhqhn667qlzxlkemq.txt